MB81EDS516545 Datasheet, PDF (25/60 Pages) Fujitsu Component Limited. – MEMORY Consumer FCRAM CMOS 512M Bit (4 bank x 2M word x 64 bit) Consumer Applications Specific Memory for SiP

MB81EDS516545
7. WRITE with Auto Precharge (WRITA)
WRITA commands can be issued by WRIT command with AP (A10) = H. Auto precharge is a feature which
precharge the activated bank after the completion of burst write operation. The tRAS is defined from between
ACTIVE (ACT) command to the internal precharge which starts after 1+ BL/2 + tWR from WRITA command. WRIT
with Auto precharge operation should not be interrupted by subsequent READ, READA, WRIT, WRITA
commands. Next ACTIVE (ACT) command can be issued after 1+ BL/2 + tDAL after WRITA command.
8. BURST TERMINATE (BST)
BST terminates the burst read or write operation. When a burst read is terminated by BST command, the data
output will be in High-Z after CAS latency from the BST command. When a burst write is terminated by BST
command, the data input after 1 clock from BST command will be masked.
Terminate read by BST @CL=3
CK
Command
NOP
DQ (output)
READ
CL = 3
BST
CL = 3
NOP
Q0 Q1
Terminate write by BST
CK
Command
NOP
DQ (input)
WRIT
1 clock
BST
D0 D1
NOP
Masked
by BST
D2 D3
DS05-11463-1E
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