MB81EDS516545 Datasheet, PDF (32/60 Pages) Fujitsu Component Limited. – MEMORY Consumer FCRAM CMOS 512M Bit (4 bank x 2M word x 64 bit) Consumer Applications Specific Memory for SiP

MB81EDS516545
■ ELECTRICAL CHARACTERISTICS
1. DC Characteristics
Parameter
Symbol
(Under recommended operating conditions unless otherwise noted)
Condition
Value
Unit
Min. Max.
Output High Voltage VOH(DC) IOH = -0.1 mA
VDDQ − 0.2 ⎯
V
Output Low Voltage VOL(DC) IOL = 0.1 mA
⎯
0.2 V
Input Leakage Cur-
rent
ILI
0 V ≤ VIN ≤ VDDQ,
All other pins not under test = 0 V
−5
5 μA
Output Leakage Cur-
rent
ILO 0 V ≤ VIN ≤ VDDQ, Data out disabled
−5
5 μA
Operating One Bank
Active-Precharge
Current
tRC = tRC min, tCK = tCK min, CKE = VIH, _{Tj ≤ + 105 °C}
IDD0
CS = VIH
addresses inputs are SWITCHING;
data bus inputs are STABLE
Tj ≤ + 125 °C
⎯
⎯
65 mA
75 mA
Precharge Standby
Current
IDD2P
IDD2N
All banks idle, CKE = VIL,
CS = VIH, tCK = tCK min,
address and control inputs are
SWITCHING;
data bus inputs are STABLE
All banks idle, CKE = VIH,
CS = VIH, tCK = tCK min,
address and control inputs are
SWITCHING;
data bus inputs are STABLE
Tj ≤ + 105 °C
⎯
Tj ≤ + 125 °C
⎯
6
mA
9
Tj ≤ + 105 °C
⎯
15 mA
Tj ≤ + 125 °C
⎯
20 mA
One bank active, BL = 4,
Operating Burst Read
Current
IDD4R
tCK = tCK min,
Output pin open, Gapless data,
address inputs are SWITCHING;
50% data change each burst transfer
⎯
300 mA
Operating Burst Write
Current
IDD4W
One bank active, BL = 4,
tCK = tCK min, Gapless data,
address inputs are SWITCHING;
50% data change each burst transfer
⎯
380 mA
Auto Refresh Current
tRC = tRFC min, tCK = tCK min, CKE = VIH,
IDD5 address and control inputs are SWITCHING;
data bus inputs are STABLE
⎯
120 mA
(Continued)
32
DS05-11463-1E