MB84VD2108X Datasheet, PDF (50/55 Pages) Fujitsu Component Limited. – 16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM

MB84VD2108X-85/MB84VD2109X-85
s ERASE AND PROGRAMMING PERFORMANCE (Flash)
Parameter
Sector Erase Time
Byte Programming Time
Word Programming Time
Chip Programming Time
Erase/Program Cycle
Min.




100,000
Limits
Typ.
1
8
16


Max.
10
300
360
50

Unit
Comment
s
µs
µs
s
cycle
Excludes programming time
prior to erasure
Excludes system-level
overhead
Excludes system-level
overhead
Excludes system-level
overhead
s DATA RETENTION CHARACTERISTICS (SRAM)
Parameter
Symbol
Parameter Description
VDH Data Retention Supply Voltage
IDDS2 Standby Current
tCDR Chip Deselect to Data Retention Mode Time
tR
Recovery Time
Note : tRC : Read cycle time
* : 1 µA Max. at TA ≤ 40 °C
VDH = 3.0 V
Min.
1.5

0
tRC
Typ.

0.2


Max.
3.6
5*


Unit
V
µA
ns
ns
• CE1s Controlled Data Retention Mode (Note 1)
VCCs
2.7 V
DATA RETENTION MODE
VIH
VDH
CE1s
GND
See Note 2
tCDR
VCCS −0.2 V
See Note 2
tR
50