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MB84VD2108X Datasheet, PDF (47/55 Pages) Fujitsu Component Limited. – 16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM
MB84VD2108X-85/MB84VD2109X-85
• Write Cycle (Note 1) (CE1s control) (SRAM)
Addresses
tAS
WE
CE1s
tWC
tWP
tWR
tAW
tCW
CE2s
LBs, UBs
DOUT
DIN
tCW
tBW
tBE
tCOE
tODW
Note 2
tDS
tDH
VALID DATA IN
Notes : 1.If OE is HIGH during the write cycle, the outputs will remain at high impedance.
2.Because I/O signals may be in the output state at this time, input signals of reverse
polarity must not be applied.
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