MB84VD2108X Datasheet, PDF (31/55 Pages) Fujitsu Component Limited. – 16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM

MB84VD2108X-85/MB84VD2109X-85
• Erase/Program Operations (Flash)
Parameter Symbols
JEDEC Standard
Description
Min.
tAVAV
tWC Write Cycle Time
85
tAVWL
tAS Address Setup Time (WE to Addr.)
0

tASO Address Setup Time to CEf Low During Toggle Bit Polling 15
tWLAX
tAH Address Hold Time (WE to Addr.)
45

tAHT
Address Hold Time from CEf or OE High During Toggle
Bit Polling
0
tDVWH
tDS
Data Setup Time
35
tWHDX
tDH Data Hold Time
0

tOES Output Enable Setup Time
0
Read
0

tOEH Output Enable Hold Time
Toggle and Data Polling
10

tCEPH CEf High During Toggle Bit Polling
20

tOEPH OE High During Toggle Bit Polling
20
tGHEL
tGHEL Read Recover Time Before Write (OE to CEf)
0
tGHWL
tGHWL Read Recover Time Before Write (OE to WE)
0
tWLEL
tWS WE Setup Time (CEf to WE)
0
tELWL
tCS CEf Setup Time (WE to CEf)
0
tEHWH
tWH WE Hold Time (CEf to WE)
0
tWHEH
tCH CEf Hold Time (WE to CEf)
0
tWLWH
tWP Write Pulse Width
35
tELEH
tCP
CEf Pulse Width
35
tWHWL
tWPH Write Pulse Width High
30
tEHEL
tCPH CEf Pulse Width High
30
Byte Programming Operation

tWHWH1
tWHWH1
Word Programming Operation

tWHWH2
tWHWH2 Sector Erase Operation (Note 1)

-85
Typ.






















8
16
1
Unit
Max.
 ns
 ns
 ns
 ns
 ns
 ns
 ns
 ns
 ns
 ns
 ns
 ns
 ns
 ns
 ns
 ns
 ns
 ns
 ns
 ns
 ns
 ns
 µs
 µs
s
(Continued)
31