MB84VD2108X Datasheet, PDF (43/55 Pages) Fujitsu Component Limited. – 16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM

MB84VD2108X-85/MB84VD2109X-85
• Read Cycle (SRAM)
Parameter
Symbol
Parameter Description
tRC
Read Cycle Time
tAA
Address Access Time
tCO1 Chip Enable (CE1s) Access Time
tCO2 Chip Enable (CE2s) Access Time
tOE
Output Enable Access Time
tBA
UBS, LBS to Output Valid
tCOE Chip Enable (CE1s Low and CE2s High) to Output Active
tOEE Output Enable Low to Output Active
tBE
UBS, LBS Enable Low to Output Active
tOD
Chip Enable (CE1s High or CE2s Low) to Output High-Z
tODO Output Enable High to Output High-Z
tBD
UBS, LBS Output Enable to Output High-Z
tOH
Output Data Hold Time
Min.
85





5
0
0



10
Max.
Unit

ns
85
ns
85
ns
85
ns
45
ns
85
ns

ns

ns

ns
35
ns
35
ns
35
ns

ns
43