MB84VD2108X Datasheet, PDF (26/55 Pages) Fujitsu Component Limited. – 16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM

MB84VD2108X-85/MB84VD2109X-85
s ELECTRICAL CHARACTERISTICS
1. DC Characteristics
Parameter
Symbol
Parameter Description
ILI Input Leakage Current
Test Conditions
VIN = VSS to VCCf, VCCs
ILO Output Leakage Current VOUT = VSS to VCCf, VCCs
ILIT
RESET Inputs Leakage
Current
VCCf = VCCf Max., VCCs = VCCs Max.,
RESET = 12.5 V
ILIA
ACC Input Leakage
Current
VCCf = VCCf Max., VCCs = VCCs Max.,
WP/ACC = VACC Max.
Flash VCC Active Current
ICC1f (Read)
(Note 1)
CEf = VIL,
OE = VIH
tCYCLE = 5 MHz Byte
tCYCLE = 5 MHz Word
tCYCLE = 1 MHz Byte
tCYCLE = 1 MHz Word
ICC2f
Flash VCC Active Current
(Program/Erase) (Note 2)
CEf = VIL, OE = VIH
Flash VCC Active Current
ICC3f (Read-While-Program)
(Note 5)
CEf = VIL, OE = VIH
Byte
Word
Flash VCC Active Current
ICC4f (Read-While-Erase)
(Note 5)
CEf = VIL, OE = VIH
Byte
Word
ICC5f
Flash VCC Active Current
(Erase-Suspend-Program)
CEf = VIL, OE = VIH
ICC1s
SRAM VCC Active Current
VCCs = VCC Max.,
CE1s = VIL,
CE2s = VIH
tCYCLE = 10 MHz
ICC2s
SRAM VCC Active Current
CE1s = 0.2 V,
tCYCLE = 10 MHz
CE2s = VCCs − 0.2 V _{tCYCLE = 1 MHz}
VCCf = VCC Max., CEf = VCCf ± 0.3 V
ISB1f Flash VCC Standby Current RESET = VCCf ± 0.3 V,
WP/ACC = VCCf ± 0.3 V
ISB2f
Flash VCC Standby Current VCCf = VCC Max., RESET = VSS ± 0.3 V,
(RESET)
WP/ACC = VCCf ± 0.3 V
ISB3f
Flash VCC Current
(Automatic Sleep Mode)
(Note 3)
VCCf = VCC Max., CEf = VSS ± 0.3 V
RESET = VCCf ± 0.3 V,
WP/ACC = VCCf ± 0.3 V
VIN = VCCf ± 0.3 V or VSS ± 0.3 V
ISB1s SRAM VCC Standby Current CE1s ≥ VCCs − 0.2 V, CE2s ≥ VCCs − 0.2 V
ISB2s SRAM VCC Standby Current CE2s ≤ 0.2 V
Min.
−1.0
−1.0
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Typ.
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Max. Unit
+1.0 µA
+1.0 µA
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35 µA
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20 mA
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13
mA
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15
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7
mA

7
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35 mA
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48
mA
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50
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48
mA

50
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35 mA

50 mA
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40 mA

8 mA
1
5 µA
1
5 µA
1
5 µA
0.2
7 µA
0.2
7 µA
(Continued)
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