MB84VD2108X Datasheet, PDF (32/55 Pages) Fujitsu Component Limited. – 16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM

MB84VD2108X-85/MB84VD2109X-85
(Continued)
Parameter Symbols
JEDEC Standard
Description
-85
Unit
Min. Typ. Max.

tVCS
VCCf Setup Time
50

 µs

tVLHT Voltage Transition Time (Note 2)
4

 µs

tVIDR Rise Time to VID (Note 2)
500 
 ns

tVACCR Rise Time to VACC
500 
 ns

tRB Recover Time from RY/BY
0

 ns

tRP RESET Pulse Width
500 
 ns

tEOE Delay Time from Embedded Output Enable


85 ns

tRH RESET High Level Period Before Read
200 
 ns

tBUSY Program/Erase Valid to RY/BY Delay


90 ns

tTOW Erase Time-out Time (Note 3)
50

 µs

tSPD Erase Suspend Transition Time (Note 4)


20 µs
Notes : 1.This does not include the preprogramming time.
2.This timing is for Sector Protection Operation.
3.The time between writes must be less than “tTOW” otherwise that command will not be accepted and erasure
will start. A time-out or “tTOW” from the rising edge of last CEf or WE whichever happens first will initiate the
execution of the Sector Erase command (s) .
4.When the Erase Suspend command is written during the Sector Erase operation, the device will take a
maximum of “tSPD” to suspend the erase operation.
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