MB84VD2108X Datasheet, PDF (29/55 Pages) Fujitsu Component Limited. – 16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM

MB84VD2108X-85/MB84VD2109X-85
• Read Only Operations Characteristics (Flash)
Parameter
Symbols
Description
JEDEC Standard
tAVAV
tRC Read Cycle Time
tAVQV
tACC Address to Output Delay
tELQV
tGLQV
tEHQZ
tGHQZ
tAXQX

tCEf
tOE
tDF
tDF
tOH
tREADY
Chip Enable to Output Delay
Output Enable to Output Delay
Chip Enable to Output High-Z
Output Enable to Output High-Z
Output Hold Time From Addresses,
CEf or OE, Whichever Occurs First
RESET Pin Low to Read Mode
Note : Test Conditions-Output Load : 1 TTL gate and 30 pF
Input rise and fall times : 5 ns
Input pulse levels : 0.0 V to 3.0 V
Timing measurement reference level
Input : 1.5 V
Output : 1.5 V
Test
Setup

CEf = VIL
OE = VIL
OE = VIL



-85
(Note)
Min. Max.
85


85

85

35

30

30
Unit
ns
ns
ns
ns
ns
ns

0

ns


20
µs
29