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| MB84VD2108X Datasheet, PDF (33/55 Pages) Fujitsu Component Limited. – 16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM | |||
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MB84VD2108X-85/MB84VD2109X-85
⢠Write Cycle (WE control) (Flash)
3rd Bus Cycle
Data Polling
Addresses
555H
PA
PA
tWC
tAS tAH
tRC
CEf
OE
WE
DQ
tCS
tCH
tGHWL
tWP tWPH
tDS
A0H
tDH
PD
tWHWH1
DQ7 DOUT
tCEf
tOE
tOH
DOUT
Notes : 1. PA is address of the memory location to be programmed.
2. PD is data to be programmed at byte address.
3. DQ7 is the output of the complement of the data written to the device.
4. DOUT is the output of the data written to the device.
5. Figure indicates last two bus cycles out of four bus cycle sequence.
6. These waveforms are for the Ã16 mode. (The addresses differ from Ã8 mode.)
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