MB84VD2108X Datasheet, PDF (46/55 Pages) Fujitsu Component Limited. – 16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM

MB84VD2108X-85/MB84VD2109X-85
• Write Cycle (Note 3) (WE control) (SRAM)
Addresses
tAS
WE
CE1s
tWC
tWP
tWR
tAW
tCW
CE2s
tCW
LBs, UBs
tBW
tODW
tOEW
DOUT
DIN
Note 1
Note 4
tDS
tDH
VALID DATA IN
Note 2
Note 4
Notes : 1.If CE1s goes LOW (or CE2s goes HIGH) coincident with or after WE goes LOW, the
output will remain at high impedance.
2.If CE1s goes HIGH (or CE2s goes LOW) coincident with or before WE goes HIGH, the
output will remain at high impedance.
3.If OE is HIGH during the write cycle, the outputs will remain at high impedance.
4.Because I/O signals may be in the output state at this time, input signals of reverse
polarity must not be applied.
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