MB84VD2108X Datasheet, PDF (27/55 Pages) Fujitsu Component Limited. – 16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM

MB84VD2108X-85/MB84VD2109X-85
(Continued)
Parameter
Symbol
Parameter Description
VIL Input Low Level
VIH Input High Level
Test Conditions


Min.
−0.3
2.4
Typ. Max. Unit

0.5 V
 VCC+0.3* V
Voltage for Sector
VID
Protection, and Temporary
Sector Unprotection

(RESET) (Note 4)
11.5

12.5 V
Voltage for Program
VACC Acceleration (WP/ACC)
(Note4)

8.5
9.0
9.5 V
VOL
Output Low Voltage Level
VCCf = VCCf Min., VCCs = VCCs Min.,
IOL = 1.0 mA
VOH
Output High Voltage Level
VCCf = VCCf Min., VCCs = VCCs Min.,
IOH = −0.5 mA


0.4 V
2.4


V
VLKO
Flash Low VCCf Lock-Out
Voltage

2.3

2.5 V
*: VCC indicates lower of VCCf or VCCs
Notes : 1. The ICC current listed includes both the DC operating current and the frequency dependent component.
2. ICC active while Embedded Algorithm (program or erase) is in progress.
3. Automatic sleep mode enables the low power mode when address remain stable for 150 ns.
4. Applicable for only VCCf applying.
5. Embedded Algorithm (program or erase) is in progress. (@5 MHz)
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