MC9S12H256VFVE Datasheet, PDF (97/130 Pages) Freescale Semiconductor, Inc – Original Release Date: 29 SEP 2000 Revised: 28 JUL 2008

MC9S12H256 Device User Guide — V01.20
Table A-6 5V I/O Characteristics
Conditions are shown in Table A-4 unless otherwise noted
16 D Input Capacitance
C_in
6
–
pF
Injection current⁴
17 T _{Single Pin limit}
Total Device Limit. Sum of all injected currents
I_ICS
–2.5
–
I_ICP
–25
2.5
mA
25
18 P _{Port H, J Interrupt Input Pulse filtered}⁵
t_PULSE
3
µs
19 P _{Port H, J Interrupt Input Pulse passed}⁵
t_PULSE
10
µs
NOTES:
1. Maximum leakage current occurs at maximum operating temperature. Current decreases by approximately one-half for
each 8 C to 12 C in the temperature range from 50 C to 125 C.
2. Maximum leakage current occurs at maximum operating temperature. Current decreases by approximately one-half for
each 8 C to 12 C in the temperature range from 50 C to 125 C.
3. This only applies to the EPP package, non-EPP packages retain the 100ns typ and 130ns max spec.
4. Refer to Section A.1.4 Current Injection, for more details
5. Parameter only applies in STOP or Pseudo STOP mode.
A.1.10 Supply Currents
This section describes the current consumption characteristics of the device as well as the conditions for
the measurements.
A.1.10.1 Measurement Conditions
All measurements are without output loads. Unless otherwise noted the currents are measured in single
chip mode, internal voltage regulator enabled and at 16MHz bus frequency using a 4MHz oscillator in
Colpitts mode. Production testing is performed using a square wave signal at the EXTAL input.
A.1.10.2 Additional Remarks
In expanded modes the currents flowing in the system are highly dependent on the load at the address, data
and control signals as well as on the duty cycle of those signals. No generally applicable numbers can be
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