33899 Datasheet, PDF (8/26 Pages) Freescale Semiconductor, Inc – Programmable H-Bridge Power IC

ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
Characteristics at - 40°C ≤ T_J ≤ +150°C, 4.75V ≤ V_CC ≤ 5.25V, 3.14V ≤ V_CCL ≤ 3.47V, 2.97V ≤ V_DDQ ≤ 5.25V,
6.0V ≤ V_IGNP ≤ 26.5V, unless otherwise noted. Typical values reflect the approximate parameter means at T_A = 25°C under
nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
CURRENT SENSE (CONTINUED)
Current Sense Saturation Voltage
FWD = 5.0V, REV = 0V; Then FWD = 0V, REV = 5.0V, R_CSNS= 10kΩ V_{CSNS_SAT} V_CC -0.2
–
V_CC + 0.2
V
High Side Current Limit
DI Bit 4 and Bit 3 = 00
I_HSLIM
A
5.8
–
10.2
DI Bit 4 and Bit 3 = 01⁽⁵⁾
DI Bit 4 and Bit 3 = 10⁽⁵⁾
DI Bit 4 and Bit 3 = 11⁽⁵⁾
7.2
–
11.9
8.0
–
13.5
10.0
–
17.9
Low Side Current Limit
DI Bit 4 and Bit 3 = 00
I_LSLIM
A
5.3
–
8.8
DI Bit 4 and Bit 3 = 01
6.4
–
10.0
DI Bit 4 and Bit 3 = 10
7.4
–
11.2
DI Bit 4 and Bit 3 = 11
10.0
–
15.0
Low Side Current Limit Comparator
I_LSCMP
A
DI Bit 4 and Bit 3 = 00
3.2
–
5.2
DI Bit 4 and Bit 3 = 01
4.2
–
6.4
DI Bit 4 and Bit 3 = 10
DI Bit 4 and Bit 3 = 11
5.0
–
7.5
7.5
–
10.6
Current Limit Current Comparator Differential
DI Bit 4 and Bit 3 = 00
I_{CURLIM -}
A
I_LSCMP
1.0
3.0
–
DI Bit 4 and Bit 3 = 01
1.0
3.0
–
DI Bit 4 and Bit 3 = 10
1.0
3.0
–
DI Bit 4 and Bit 3 = 11
1.0
3.0
–
LSCMP Output Voltage
V
I_OL = 100μA
I_OH = -100μA⁽⁷⁾
V_{LSCMP_OL}
–
–
V_{LSCMP_OH} V_DDQ-0.5
–
0.1
V_DDQ
REDIS Current
Pull-up Current Source
Pull-down Current Sink
REDIS Threshold
Voltage Where Low Side MOSFET Turns On
Voltage Where Low Side MOSFET Turns Off⁽⁷⁾
Hysteresis⁽⁷⁾
I_{REDIS_sc}
-160
–
I_{REDIS_sk}
1.0
V_{REDIS_THR}
3.6
–
3.35
–
0.15
–
-70
μA
5.0
mA
V
4.4
4.15
0.35
THERMAL
Thermal Shutdown⁽⁶⁾, SPI Bits = 11
Thermal Hysteresis⁽⁶⁾
Temperature Warning⁽⁶⁾, SPI Bits = 01
Temperature Warning Hysteresis⁽⁶⁾
T_LIM
157.5
–
T_HYS
3.0
–
T_WARN
132.5
–
T_WARN(HYS)
3.0
–
172.5
°C
10
°C
147.5
°C
10
°C
Notes
5. Production test at 125°C is at V_IGNP = 6V. Operation to 26.5V is guaranteed by design.
6. Guaranteed by characterization, not production tested.
7. Design Information, not production tested.
33899
8
Analog Integrated Circuit Device Data
Freescale Semiconductor