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33899 Datasheet, PDF (7/26 Pages) Freescale Semiconductor, Inc – Programmable H-Bridge Power IC
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ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
Characteristics at - 40°C ≤ TJ ≤ +150°C, 4.75V ≤ VCC ≤ 5.25V, 3.14V ≤ VCCL ≤ 3.47V, 2.97V ≤ VDDQ ≤ 5.25V,
6.0V ≤ VIGNP ≤ 26.5V, unless otherwise noted. Typical values reflect the approximate parameter means at TA = 25°C under
nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
CONTROL INPUTS (CONTINUED)
Input Leakage Current — Digital Inputs
SCLK, DI: VIN = 0V
Input Bias Current
EN1, EN2, FWD, REV, PWM: VIN = 5.0V
CS: VIN = 0V
DATA OUTPUT
Data Output Low Voltage
IOL = 1.6mA
Data Output High Voltage
IOH = - 800μA
Data Out Tri-state Leakage
POWER OUTPUT
IIN
- 5.0
–
IDWN
27
–
IUP
- 70
–
VDO_OL
–
–
VDO_OH
VDDQ - 0.5
–
ILEAK
- 5.0
–
μA
5.0
μA
70
- 27
V
0.4
V
–
5.0
μA
Breakdown Voltage
S0, S1, VIGNP: I = 20mA
ON-Resistance (Each Output FET)
IOUT = 3.5A, VIGNP = 6.0V
Body Diode Forward Voltage (All 4 Output Diodes)(6)
ENx = 0V, IOUT = 3.0A, TJ = 150°C
ENx = 0V, IOUT = 3.0A, TJ = 23°C
ENx = 0V, IOUT = 3.0A, TJ = -40°C
OFF-State Output Bias
VCC = 5.0V, EN1 = EN2 = 0V, S0 Shorted to S1 (Through Motor)
OFF-state Output Leakage (between SO and S1)
VCC = 0V, EN1 = EN2 = 0V, RL = 600Ω, VIGN = 16V
VCC = 5.0V, EN1 = EN2 = 0V, RL = 600Ω, VIGN = 18V
Fault Threshold (OFF State) (EN1 = EN2 = 0V)
Measured at S1
Measured at S0
CURRENT SENSE
VBVDSS
40
–
RDS(ON)
–
–
VF
–
–
–
–
–
–
VBIAS
0.2 VCC
–
ILEAK
–
–
–
–
VFAULT_THR1 0.45 VCC
–
VFAULT_THR2 0.15 VCC
–
V
–
mΩ
165
V
1.0
1.4
1.8
V
0.6 VCC
μA
100
100
V
0.60 VCC
0.35 VCC
Current Sense Zero
FWD = 5.0V, REV = 0V; Then FWD = 0V, REV = 5.0V, IS1/S0 = 0A
Current Sense Ratio: kCSNS = IS1/S0 / ICS
(FWD = 5.0V, REV = 0V; and FWD = 0V, REV = 5.0V)
IS1/S0 = - 0.4A
IS1/S0 = - 1.6A
IS1/S0 = - 6.0A(7)
ICSZ
–
–
0.2
mA
kCSNS
250
–
500
kCSNS
340
–
435
kCSNS
–
400
–
Analog Integrated Circuit Device Data
Freescale Semiconductor
33899
7
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