MRF6P3300HR5 Datasheet, PDF (7/24 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET)

TYPICAL NARROWBAND CHARACTERISTICS
23
22
T_C = −30_C
G_ps
21
20
25_C
70
−30_C
25_C ⁶⁰
85_C ₅₀
40
19
85_C
30
18
20
17
η_D
16
5
10
V_DD = 32 Vdc
I_DQ = 1600 mA
f = 860 MHz
100
10
0
800
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
10¹⁰
21.5
21
I_DQ = 1600 mA
f = 860 MHz
20.5
20
19.5
19
18.5
18
17.5
17
16.5
V_DD = 12 V ^{16 V}
20 V
0 50 100 150 200
32 V
24 V 28 V
250 300 350 400
P_out, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
10⁹
10⁸
10⁷
90 100 110 120 130 140 150 160 170 180 190 200 210
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere²
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I_D2 for MTTF in a particular application.
Figure 13. MTTF Factor versus Junction Temperature
RF Device Data
Freescale Semiconductor
MRF6P3300HR3 MRF6P3300HR5
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