MRF6P3300HR5 Datasheet, PDF (13/24 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET)

TYPICAL TWO - TONE BROADBAND CHARACTERISTICS
24.5
24 ^{IDQ = 2400 mA}
23.5 ^{2000 mA}
23
1600 mA
22.5
1200 mA
22
21.5
800 mA
21
5
10
V_DD = 32 Vdc, f1 = 470 MHz, f2 = 476 MHz
Two−Tone Measurements, 6 MHz Tone Spacing
100
1000
P_out, OUTPUT POWER (WATTS) PEP
Figure 22. Two - Tone Power Gain versus
Output Power @ 473 MHz
23.5
I_DQ = 2400 mA
23
22.5 _{2000 mA}
22
1600 mA
21.5
21 _{1200 mA}
20.5
20
5
800 mA
V_DD = 32 Vdc, f1 = 557 MHz, f2 = 563 MHz
Two−Tone Measurements, 6 MHz Tone Spacing
10
100
1000
P_out, OUTPUT POWER (WATTS) PEP
Figure 23. Two - Tone Power Gain versus
Output Power @ 560 MHz
21
20.5 ^{IDQ = 2400 mA}
2000 mA
20
1600 mA
19.5
1200 mA
19
800 mA
18.5
5
10
V_DD = 32 Vdc, f1 = 657 MHz, f2 = 663 MHz
Two−Tone Measurements, 6 MHz Tone Spacing
100
1000
P_out, OUTPUT POWER (WATTS) PEP
Figure 24. Two - Tone Power Gain versus
Output Power @ 660 MHz
19
I_DQ = 2400 mA
18.5
2000 mA
18
1600 mA
17.5
1200 mA
17
800 mA
16.5
5
10
V_DD = 32 Vdc, f1 = 757 MHz, f2 = 763 MHz
Two−Tone Measurements, 6 MHz Tone Spacing
100
1000
P_out, OUTPUT POWER (WATTS) PEP
Figure 25. Two - Tone Power Gain versus
Output Power @ 760 MHz
20
19.5 ^{IDQ = 2400 mA}
2000 mA
19
1600 mA
18.5
1200 mA
18
800 mA
17.5
5
10
V_DD = 32 Vdc, f1 = 854 MHz, f2 = 860 MHz
Two−Tone Measurements, 6 MHz Tone Spacing
100
1000
P_out, OUTPUT POWER (WATTS) PEP
Figure 26. Two - Tone Power Gain versus
Output Power @ 857 MHz
RF Device Data
Freescale Semiconductor
MRF6P3300HR3 MRF6P3300HR5
13