MRF6P3300HR5 Datasheet, PDF (19/24 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET)

TYPICAL ATSC 8VSB BROADBAND CHARACTERISTICS
40
−23
37.5
−24
35
η_D
−25
32.5
−26
30 _{VDD = 32 Vdc, Pout = 100 W (Avg.)}
−27
27.5 I_DQ = 1700 mA, ATSC 8VSB
−28
25
−29
22.5
G_ps
−30
20
−31
17.5
ACPR
−32
15
400
500
600
−33
700
800
900
f, FREQUENCY (MHz)
Figure 48. Single - Carrier ATSC 8VSB
Broadband Performance @ 100 Watts Avg.
24
f = 560 MHz
23
470 MHz
22
21 _{660 MHz}
20
760 MHz
19
18 ^{860 MHz}
V_DD = 32 Vdc, I_DQ = 1700 mA
17
3
10
100
200
P_out, OUTPUT POWER (WATTS) AVG.
Figure 49. Single - Carrier ATSC 8VSB Power
Gain versus Output Power
50
V_DD = 32 Vdc, I_DQ = 1700 mA
ATSC 8VSB
40
30
20
f = 660 MHz
760 MHz
860 MHz
470 MHz
560 MHz
10
0
3
10
100
200
P_out, OUTPUT POWER (WATTS) AVG.
Figure 50. Single - Carrier ATSC 8VSB Drain
Efficiency versus Output Power
−15
V_DD = 32 Vdc, I_DQ = 1700 mA
ATSC 8VSB
−20
−25
f = 860 MHz
560 MHz
−30
−35
−40
3
10
470 MHz
660 MHz
760 MHz
100
200
P_out, OUTPUT POWER (WATTS) AVG.
Figure 51. Single - Carrier ATSC 8VSB ACPR
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6P3300HR3 MRF6P3300HR5
19