MRF6P3300HR5 Datasheet, PDF (15/24 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET)

TYPICAL TWO - TONE BROADBAND CHARACTERISTICS
0
V_DD = 32 Vdc, P_out = 270 W (PEP), I_DQ = 1600 mA
−10
Two−Tone Measurements
f1 = 470 MHz, f2 = 470 MHz + Tone Spacing
−20
3rd Order
−30
5th Order
−40
−50
7th Order
0
V_DD = 32 Vdc, P_out = 270 W (PEP), I_DQ = 1600 mA
Two−Tone Measurements, f = 560 MHz
−10
−20
−30
3rd Order
−40
5th Order
−50
7th Order
−60
0.1
1
10
100
TWO−TONE SPACING (MHz)
Figure 32. Intermodulation Distortion
Products versus Tone Spacing @ 470 MHz
−60
0.01
0.1
1
10
100
TWO−TONE SPACING (MHz)
Figure 33. Intermodulation Distortion
Products versus Tone Spacing @ 560 MHz
0
V_DD = 32 Vdc, P_out = 270 W (PEP), I_DQ = 1600 mA
Two−Tone Measurements, f = 660 MHz
−10
−20
3rd Order
−30
5th Order
−40
−50
7th Order
−60
0.01
0.1
1
10
100
TWO−TONE SPACING (MHz)
Figure 34. Intermodulation Distortion
Products versus Tone Spacing @ 660 MHz
0
V_DD = 32 Vdc, P_out = 270 W (PEP), I_DQ = 1600 mA
Two−Tone Measurements, f = 760 MHz
−10
−20
−30
3rd Order
−40
5th Order
−50
7th Order
−60
0.01
0.1
1
10
100
TWO−TONE SPACING (MHz)
Figure 35. Intermodulation Distortion
Products versus Tone Spacing @ 760 MHz
0
V_DD = 32 Vdc, P_out = 270 W (PEP), I_DQ = 1600 mA
−10
Two−Tone Measurements, 6 MHz Tone Spacing
f1 = 860 MHz − Tone Spacing, f2 = 860 MHz
−20
3rd Order
−30
5th Order
−40
−50 7th Order
−60
0.1
1
10
100
TWO−TONE SPACING (MHz)
Figure 36. Intermodulation Distortion
Products versus Tone Spacing @ 860 MHz
RF Device Data
Freescale Semiconductor
MRF6P3300HR3 MRF6P3300HR5
15