MRF6P3300HR5 Datasheet, PDF (2/24 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET)

Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
3B (Minimum)
Machine Model (per EIA/JESD22 - A115)
C (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Off Characteristics⁽¹⁾
Zero Gate Voltage Drain Leakage Current
(V_DS = 68 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
10
Zero Gate Voltage Drain Leakage Current
(V_DS = 32 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
1
Gate - Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_GSS
—
—
1
On Characteristics⁽¹⁾
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 350 µAdc)
V_GS(th)
1
2.2
3
Drain - Source On - Voltage
(V_GS = 10 Vdc, I_D = 2.4 Adc)
V_DS(on)
—
0.22
0.3
Forward Transconductance
(V_DS = 10 Vdc, I_D = 2.4 Adc)
g_fs
—
7.4
—
Dynamic Characteristics ^(1,2)
Reverse Transfer Capacitance
(V_DS = 32 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_rss
—
1.4
—
Functional Tests⁽³⁾ (In Freescale Narrowband Test Fixture, 50 ohm system) V_DD = 32 Vdc, I_DQ = 1600 mA, P_out = 270 W PEP,
f1 = 857 MHz, f2 = 863 MHz
Power Gain
G_ps
19
20.2
23
Drain Efficiency
η_D
41
44.1
—
Intermodulation Distortion
IMD
—
- 30.8
- 28
Input Return Loss
IRL
—
- 24
-9
P_out @ 1 dB Compression Point, CW
(f = 860 MHz)
P1dB
—
320
—
Gate Quiescent Voltage
(V_DS = 32 Vdc, I_D = 1600 mAdc)
1. Each side of the device measured separately.
2. Part is internally matched both on input and output.
3. Measurement made with device in push - pull configuration.
V_GS(Q)
2
2.8
4
Unit
µAdc
µAdc
µAdc
Vdc
Vdc
S
pF
dB
%
dBc
dB
W
Vdc
MRF6P3300HR3 MRF6P3300HR5
2
RF Device Data
Freescale Semiconductor