MRF6P3300HR5 Datasheet, PDF (18/24 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET)

TYPICAL CW BROADBAND CHARACTERISTICS
57
56.5
56
Ideal
55.5
P1dB = 53.59 dBm
55
(228.67 W)
54.5
54
53.5
Actual
53
52.5
52
V_DD = 32 Vdc, I_DQ = 1600 mA
Pulsed CW, 8 µsec(on), 1 msec(off)
51.5
f = 470 MHz
51
28 28.5 29 29.5 30 30.5 31 31.5 32 32.5 33
P_in, INPUT POWER (dBm)
Figure 43. Pulse CW Output Power versus
Input Power @ 470 MHz
59
58
P3dB = 55.49 dBm
(353.76 W)
57
P1dB = 54.84 dBm
56 _{(304.81 W)}
55
Ideal
Actual
54
V_DD = 32 Vdc, I_DQ = 1600 mA
Pulsed CW, 8 µsec(on), 1 msec(off)
f = 560 MHz
53
29
30
31
32
33
34
35
36
P_in, INPUT POWER (dBm)
Figure 44. Pulse CW Output Power versus
Input Power @ 560 MHz
60
59
P3dB = 54.88 dBm
Ideal
58
(307.45 W)
57
56
P1dB = 54.04 dBm
(253.67 W)
55
54
Actual
53
V_DD = 32 Vdc, I_DQ = 1600 mA
52
Pulsed CW, 8 µsec(on), 1 msec(off)
f = 660 MHz
51
30 31 32 33 34 35 36 37 38
P_in, INPUT POWER (dBm)
Figure 45. Pulse CW Output Power versus
Input Power @ 660 MHz
60
59
P3dB = 55.25 dBm
Ideal
58
(334.73 W)
57
P1dB = 54.56 dBm
56
(286.06 W)
55
54
Actual
53
V_DD = 32 Vdc, I_DQ = 1600 mA
52
Pulsed CW, 8 µsec(on), 1 msec(off)
f = 760 MHz
51
31 32 33 34 35 36 37 38 39
P_in, INPUT POWER (dBm)
Figure 46. Pulse CW Output Power versus
Input Power @ 760 MHz
60
59
P3dB = 55.58 dBm
Ideal
(361.21 W)
58
57
P1dB = 54.82 dBm
56
(303.25 W)
55
Actual
54
V_DD = 32 Vdc, I_DQ = 1600 mA
53
Pulsed CW, 8 µsec(on), 1 msec(off)
f = 860 MHz
52
32 33 34 35 36 37 38 39 40
P_in, INPUT POWER (dBm)
Figure 47. Pulse CW Output Power versus
Input Power @ 860 MHz
MRF6P3300HR3 MRF6P3300HR5
18
RF Device Data
Freescale Semiconductor