MRF6P3300HR5 Datasheet, PDF (14/24 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET)

TYPICAL TWO - TONE BROADBAND CHARACTERISTICS
−25
I_DQ = 800 mA
−30
−35 ^{1200 mA}
−40 ^{2400 mA}
−45
1600 mA
2000 mA
−50
−55
10
V_DD = 32 Vdc, f1 = 470 MHz, f2 = 476 MHz
Two−Tone Measurements, 6 MHz Tone Spacing
100
1000
P_out, OUTPUT POWER (WATTS) PEP
Figure 27. Third Order Intermodulation
Distortion versus Output Power @ 473 MHz
−25
−30 _{IDQ = 800 mA}
−35 _{1200 mA}
−40
1600 mA
−45
2000 mA
2400 mA
−50
V_DD = 32 Vdc, f1 = 557 MHz, f2 = 563 MHz
Two−Tone Measurements, 6 MHz Tone Spacing
−55
10
100
1000
P_out, OUTPUT POWER (WATTS) PEP
Figure 28. Third Order Intermodulation
Distortion versus Output Power @ 560 MHz
−25
V_DD = 32 Vdc, f1 = 657 MHz, f2 = 663 MHz
Two−Tone Measurements, 6 MHz Tone Spacing
−30
−35 ^{IDQ = 800 mA}
−40 _{1200 mA}
−45
2400 mA
−50
2000 mA
1600 mA
−55
10
100
1000
P_out, OUTPUT POWER (WATTS) PEP
Figure 29. Third Order Intermodulation
Distortion versus Output Power @ 660 MHz
−25
−30 _{IDQ = 800 mA}
−35
1200 mA
−40
2400 mA
−45 _{2000 mA}
−50 1600 mA
−55
V_DD = 32 Vdc, f1 = 757 MHz, f2 = 763 MHz
Two−Tone Measurements, 6 MHz Tone Spacing
10
100
1000
P_out, OUTPUT POWER (WATTS) PEP
Figure 30. Third Order Intermodulation
Distortion versus Output Power @ 760 MHz
−25
−30
I_DQ = 800 mA
−35
1200 mA
−40
2400 mA
−45 ^{2000 mA}
1600 mA
−50
−55
10
V_DD = 32 Vdc, f1 = 854 MHz, f2 = 860 MHz
Two−Tone Measurements, 6 MHz Tone Spacing
100
1000
P_out, OUTPUT POWER (WATTS) PEP
Figure 31. Third Order Intermodulation
Distortion versus Output Power @ 857 MHz
MRF6P3300HR3 MRF6P3300HR5
14
RF Device Data
Freescale Semiconductor