MRF6P3300HR5 Datasheet, PDF (6/24 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET)

TYPICAL NARROWBAND CHARACTERISTICS
−10
V_DD = 32 Vdc, I_DQ = 1600 mA, f1 = 857 MHz
−20 ^{f2 = 863 MHz, Two−Tone Measurements}
−30
−40
3rd Order
−50
−60 ^{5th Order}
−70
5
7th Order
10
100
600
P_out, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
−20
V_DD = 32 Vdc, P_out = 270 W (PEP), I_DQ = 1600 mA
−25 Two−Tone Measurements, f = 860 MHz
−30
3rd Order
−35
−40
5th Order
−45
−50
7th Order
−55
0.01
0.1
1
10
40
TWO−TONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing @ 860 MHz
64
63
P6dB = 56.28 dBm
62
(424.54 W)
P3dB = 55.87 dBm
61
(386.48 W)
Ideal
60
59 _{P1dB = 55.20 dBm}
58 _{(330.94 W)}
57
56
55
54
53
52
32 33 34 35 36
Actual
V_DD = 32 Vdc, I_DQ = 1600 mA
Pulsed CW, 8 µsec(on), 1 msec(off)
f = 860 MHz
37 38 39 40 41 42 43 44
P_in, INPUT POWER (dBm)
Figure 9. Pulse CW Output Power versus
Input Power
45
V_DD = 32 Vdc, I_DQ = 1600 mA, f = 860 MHz
8K Mode OFDM, 64 QAM Data Carrier
40 _{Modulation, 5 Symbols}
−40
25_C
−44
T_C = 85_C
35
25_C
−48
η_D
−30_C
30
ACPR
−52
25
−56
20
15
20
−30_C
25_C
−60
G_ps
85_C
−64
30 40 50 60 70 80 90 100
200
P_out, OUTPUT POWER (WATTS) AVG.
Figure 10. Single - Carrier DVBT OFDM ACPR,
Power Gain and Drain Efficiency
versus Output Power
MRF6P3300HR3 MRF6P3300HR5
6
RF Device Data
Freescale Semiconductor