MRF6P3300HR5 Datasheet, PDF (21/24 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET)

Z_source
f = 470 MHz
f = 860 MHz
Z_o = 25 Ω
Z_load
f = 860 MHz
f = 470 MHz
Z_o = 25 Ω
V_DD = 32 Vdc, I_DQ = 1600 mA, P_out = 270 W PEP
f
MHz
Z_source
Ω
Z_load
Ω
470
8.77 - j5.43
6.09 - j4.37
510
8.74 - j4.17
6.39 - j1.65
560
8.86 - j2.87
6.69 - j2.45
610
10.55 - j2.45
7.36 - j1.95
660
12.41 - j3.53
7.73 - j1.75
710
13.11 - j6.04
7.95 - j1.20
760
11.29 - j10.15
8.18 - j1.36
810
6.81 - j10.41
7.81 - j1.60
860
3.73 - j9.66
6.94 - j2.49
Z_source = Test circuit impedance as measured from
gate to gate, balanced configuration.
Z_load = Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
Device
+ Under
Test
Output
−
Matching
Network
−
Z _source
+
Z _load
Figure 53. 470 - 860 MHz Broadband Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor
MRF6P3300HR3 MRF6P3300HR5
21