MRF6P3300HR5 Datasheet, PDF (23/24 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET)

PACKAGE DIMENSIONS
ccc M T A M B M
R (LID)
G4
L
J
1
2
4X K
3
5
4
S (INSULATOR)
bbb M T A M B M
4X D
bbb M T A M B M
EH
A
ccc M T A M B M
N
(LID)
M
(INSULATOR)
bbb M T A M B M
A
2X Q
bbb M T A M B M
B (FLANGE)
B
F
C
T
SEATING
PLANE
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DIMENSION H TO BE MEASURED 0.030 (0.762)
AWAY FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION
OF 1.140 (28.96) BASED ON 3M SCREW.
INCHES
DIM MIN MAX
A 1.335 1.345
B 0.380 0.390
C 0.180 0.224
D 0.325 0.335
E 0.060 0.070
F 0.004 0.006
G
1.100 BSC
H 0.097 0.107
J 0.2125 BSC
K 0.135 0.165
L
0.425 BSC
M 0.852 0.868
N 0.851 0.869
Q 0.118 0.138
R 0.395 0.405
S 0.394 0.406
bbb 0.010 REF
ccc 0.015 REF
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. GATE
5. SOURCE
MILLIMETERS
MIN MAX
33.91 34.16
9.65 9.91
4.57 5.69
8.26 8.51
1.52 1.78
0.10 0.15
27.94 BSC
2.46 2.72
5.397 BSC
3.43 4.19
10.8 BSC
21.64 22.05
21.62 22.07
3.00 3.30
10.03 10.29
10.01 10.31
0.25 REF
0.38 REF
CASE 375G - 04
ISSUE F
NI - 860C3
RF Device Data
Freescale Semiconductor
MRF6P3300HR3 MRF6P3300HR5
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