MC9S12E64CFUE Datasheet, PDF (583/606 Pages) Freescale Semiconductor, Inc – Microcontrollers

Appendix A Electrical Characteristics
A.4.2 NVM Reliability
The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process
monitors and burn-in to screen early life failures. The program/erase cycle count on the sector is
incremented every time a sector or mass erase event is executed.
Table A-15. NVM Reliability Characteristics¹
Conditions are shown in Table A-4 unless otherwise noted
Num C
Rating
Symbol
Min
Typ
Max
Unit
Flash Reliability Characteristics
1 C Data retention after 10,000 program/erase cycles at an
average junction temperature of T_Javg ≤ 85°C
t_FLRET
15
2 C Data retention with <100 program/erase cycles at an
20
average junction temperature T_Javg ≤ 85°C
100²
100²
—
Years
—
3 C Number of program/erase cycles
(–40°C ≤ T_J ≤ 0°C)
n_FL
10,000
—
—
Cycles
4 C Number of program/erase cycles
(0°C ≤ T_J ≤ 140°C)
10,000 100,000³
—
1 _{TJavg will not exeed 85°C considering a typical temperature profile over the lifetime of a consumer, industrial or automotive}
application.
2 _{Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated to}
25°C using the Arrhenius equation. For additional information on how Freescale defines Typical Data Retention, please refer
to Engineering Bulletin EB618.
3 _{Spec table quotes typical endurance evaluated at 25°C for this product family, typical endurance at various temperature can}
be estimated using the graph below. For additional information on how Freescale defines Typical Endurance, please refer to
Engineering Bulletin EB619.
MC9S12E128 Data Sheet, Rev. 1.07
Freescale Semiconductor
583