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MC9S12E64CFUE Datasheet, PDF (566/606 Pages) Freescale Semiconductor, Inc – Microcontrollers | |||
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Appendix A Electrical Characteristics
A.1.6 ESD Protection and Latch-up Immunity
All ESD testing is in conformity with CDF-AEC-Q100 Stress test qualiï¬cation for Automotive Grade
Integrated Circuits. During the device qualiï¬cation ESD stresses were performed for the Human Body
Model (HBM), the Machine Model (MM) and the Charge Device Model.
A device will be deï¬ned as a failure if after exposure to ESD pulses the device no longer meets the device
speciï¬cation. Complete DC parametric and functional testing is performed per the applicable device
speciï¬cation at room temperature followed by hot temperature, unless speciï¬ed otherwise in the device
speciï¬cation.
Table A-2. ESD and Latch-up Test Conditions
Model
Human Body
Machine
Latch-up
Description
Series Resistance
Storage Capacitance
Number of Pulse per pin
positive
negative
Series Resistance
Storage Capacitance
Number of Pulse per pin
positive
negative
Minimum input voltage limit
Maximum input voltage limit
Symbol
R1
C
â
â
R1
C
â
â
â
â
Value
1500
100
â
3
3
0
200
3
3
â2.5
7.5
Unit
Ohm
pF
Ohm
pF
V
V
Num
1
2
3
4
5
Table A-3. ESD and Latch-Up Protection Characteristics
C
Rating
C
Human Body Model (HBM)
C
Machine Model (MM)
C
Charge Device Model (CDM)
C
Latch-up Current at 125°C
positive
negative
C
Latch-up Current at 27°C
positive
negative
Symbol
VHBM
VMM
VCDM
ILAT
ILAT
Min
2000
200
500
+100
-100
+200
-200
Max
Unit
â
V
â
V
â
V
mA
â
â
mA
â
â
MC9S12E128 Data Sheet, Rev. 1.07
566
Freescale Semiconductor
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