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MC9S12E128 Datasheet, PDF (583/606 Pages) Freescale Semiconductor, Inc – HCS12 Microcontrollers | |||
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Appendix A Electrical Characteristics
A.4.2 NVM Reliability
The reliability of the NVM blocks is guaranteed by stress test during qualiï¬cation, constant process
monitors and burn-in to screen early life failures. The program/erase cycle count on the sector is
incremented every time a sector or mass erase event is executed.
Table A-15. NVM Reliability Characteristics1
Conditions are shown in Table A-4 unless otherwise noted
Num C
Rating
Symbol
Min
Typ
Max
Unit
Flash Reliability Characteristics
1 C Data retention after 10,000 program/erase cycles at an
average junction temperature of TJavg ⤠85°C
tFLRET
15
2 C Data retention with <100 program/erase cycles at an
20
average junction temperature TJavg ⤠85°C
1002
1002
â
Years
â
3 C Number of program/erase cycles
(â40°C ⤠TJ ⤠0°C)
nFL
10,000
â
â
Cycles
4 C Number of program/erase cycles
(0°C ⤠TJ ⤠140°C)
10,000 100,0003
â
1 TJavg will not exeed 85°C considering a typical temperature proï¬le over the lifetime of a consumer, industrial or automotive
application.
2 Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated to
25°C using the Arrhenius equation. For additional information on how Freescale deï¬nes Typical Data Retention, please refer
to Engineering Bulletin EB618.
3 Spec table quotes typical endurance evaluated at 25°C for this product family, typical endurance at various temperature can
be estimated using the graph below. For additional information on how Freescale deï¬nes Typical Endurance, please refer to
Engineering Bulletin EB619.
MC9S12E128 Data Sheet, Rev. 1.07
Freescale Semiconductor
583
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