PXN20 Datasheet, PDF (39/60 Pages) Freescale Semiconductor, Inc – PXN20 Microcontroller

Electrical characteristics
2 _{The maximum frequency value is with frequency modulation disabled. If frequency modulation is enabled, the maximum}
frequency value should be de-rated by the percentage of modulation enabled so that the maximum frequency is not exceeded.
3 _{“Loss of Reference Frequency” is the reference frequency detected internally, which transitions the PLL into self clocked mode.}
4 _{This specification applies to the period required for the PLL to re-lock after changing the MFD frequency control bits in the}
synthesizer control register (SYNCR). From power up with crystal oscillator reference, lock time will be additive with crystal
startup time.
5 _{Values are with frequency modulation disabled. If frequency modulation is enabled, jitter is the sum of Cjitter + Cmod.}
6 _{Modulation depth selected must not result in fPLL value greater than the fPLL maximum specified value.}
7 _{Maximum and minimum variations from programmed modulation depth are 2%, 3%, and 4% peak-to-peak. Use only these}
settings.
8 _{Depth tolerance is the programmed modulation depth ±0.25% of fSYS.}
9 _{See the Block Guide for VCO frequency synthesis equations.}
10 _{Modulation rates less than 400 kHz will result in exceedingly long FM calibration durations. Modulation rates greater than}
1 MHz will result in reduced calibration accuracy.
4.11 ADC electrical characteristics
Table 20. ADC conversion specifications (operating)
Spec
Characteristic
Symbol
Min
Max
Unit
1 Analog High Reference Voltage
2 Analog Low Reference Voltage
3 Analog Input Voltage
4 Sampling Frequency
5 Maximum ADC Clock Frequency
6 Sampling Time
V_DDA = 3.0 V – 3.6 V
V_DDA > 3.6 V – 5.5 V
7 Differential Non Linearity
V_RH
V_RL
AV_IN
F_S
F_MAX
t_S
DNL
V_DDA – 0.5
0
V_RL
—
—
250
125
–1.0
V_DDA
0.5
V_RH
1.53
60
—
1.0
V
V
V
MHz
MHz
ns
LSB
8 Integral Non Linearity
INL
–1.5
1.5
LSB
9 Offset Error
OFS
–1.0
1.0
LSB
10 Gain Error
GNE
–2.0
2.0
LSB
11 Total Unadjusted Error ¹
TUE
–2.0
2.0
LSB
1 _{TUE assumes no pin activity on pins adjacent to analog channel or output driver activity on corresponding VDDE segment.}
4.12 Flash memory electrical characteristics
Table 21. Flash program and erase specifications¹
Spec
Characteristic
1 Double Word (64 bits) Program Time⁴
2 Page (128 bits and 256 bits) Program Time⁴
3 16 KB Block Pre-program and Erase Time
4 64 KB Block Pre-program and Erase Time
5 128 KB Block Pre-program and Erase Time
Symbol
Min
Initial
Max²
t_dwprogram — —
t_pprogram — 160
t_16kpperase — 1000
t_64kpperase — 1800
t_128kpperase — 2600
Max³
500
500
5000
5000
7500
Unit
s
s
ms
ms
ms
PXN20 Microcontroller Data Sheet, Rev. 1
Freescale Semiconductor
39