PXN20 Datasheet, PDF (32/60 Pages) Freescale Semiconductor, Inc – PXN20 Microcontroller

Electrical characteristics
2 _{VDDE1 – VDDE4 are separate power segments and may be powered independently with no differential voltage constraints}
between the power segments. V_DDE1 – V_DDE3 pad power segments contain ADC analog input channels and thus the input
analog signal level may be clamped to the V_DDE level, resulting in inaccurate ADC results if the V_DDE voltage level is less than
V_DDA.
3 _{When VRCSEL = VDDA (high), the internally generated VDD33 voltage may be used to power VDDEMLB as long as the PK[0:2]}
pads remain in the disabled default state with their output buffers, input buffers, and pull devices disabled.
4 _{The pad type is indicated by one or more of the following abbreviations: A–analog, F—fast speed, H–high voltage, I—input-only,}
M–medium speed, S–slow speed. For example, pad type SH designates a slow high-voltage pad.
5 _{The IHA pads are related to VDDA.}
6 _{Characterization Based Capability:}
IOH_F = {12, 20, 30, 40} mA and IOL_F = {24, 40, 50, 65} mA for {00, 01,10, 11} drive mode with V_DDE = 3.0 V;
IOH_F = {7, 13, 18, 25} mA and IOL_F = {18, 30, 35, 50} mA for {00, 01, 10, 11} drive mode with V_DDE = 2.25 V;
IOH_F = {3, 7, 10, 15} mA and IOL_F = {12, 20, 27, 35} mA for {00, 01, 10, 11} drive mode with V_DDE = 1.62 V.
7 _{Characterization Based Capability:}
IOH_S = {6, 11.6} mA and IOL_S = {9.2, 17.7} mA for {slow, medium} I/O with V_DDEH = 4.5 V;
IOH_S = {2.8, 5.4} mA and IOL_S = {4.2, 8.1} mA for {slow, medium} I/O with V_DDEH = 3.0 V
8 _{All VOL/VOH values 100% tested with ±2 mA load.}
9 _{Absolute value of current, measured at VIL and VIH.}
10 _{Weak pull up/down inactive. Measured at VDDE = 5.25 V. Applies to pad types: SH and MH. Leakage specification guaranteed}
only when power supplies are within specified operating conditions.
11 _{Maximum leakage occurs at maximum operating temperature. Leakage current decreases by approximately one-half for each}
8 to 12 ^oC, in the ambient temperature range of 50 to 125 ^oC. Applies to pad types: pad_a and pad_ae.
4.6 Operating current specifications
Table 10. Operating currents
Spec
Characteristic
Typ¹
Max¹
Symbol 25 C –40–150 C Unit
Ambient Junction
Equations I_TOTAL = I_DDE + I_DDA + I_RH + I_DD33 + I_DDSYN + I_RC + I_DD
I_DDE = I_DDE1 + I_DDE2 + I_DDE3 + I_DDE4 + I_DDEMLB
1
V_DDE Current
V_DDE(1,2,3,4) @ 3.0 V – 5.5 V
V_DDEMLB @ 2.375 V – 3.6 V
Static²
Dynamic³
2
V_DDA Current
V_DDA @ 3.0 V – 5.5 V
Run mode
Sleep mode
– Optional 32 kHz osc enabled
3
V_RH Current
V_RH @ 3.0 V – 5.5 V
Run mode
Sleep mode
4
V_DD33 Current
V_DD33 @ 3.0 V – 3.6 V
Run mode
Sleep mode
—
—
—
—
I_DDE
0
30
A
Note 3
25
mA
I_DDA
1
30
mA
20
50
A
+5
+15
A
I_RH
300
700
A
1
30
A
I_DD33
10
20
mA
10
20
A
PXN20 Microcontroller Data Sheet, Rev. 1
32
Freescale Semiconductor