PXN20 Datasheet, PDF (30/60 Pages) Freescale Semiconductor, Inc – PXN20 Microcontroller

Electrical characteristics
4.3 ESD characteristics
Table 7. ESD ratings^{1, 2}
Characteristic
Symbol
Value
Unit
ESD for Human Body Model (HBM)
2000
V
HBM Circuit Description
R1
1500
Ohm
C
100
pF
ESD for Field Induced Charge Model (FDCM)
750 (corner pins)
250 (all other pins)
V
Number of Pulses per pin:
Positive Pulses (HBM)
Negative Pulses (HBM)
—
1
—
—
1
—
Interval of Pulses
—
1
second
1 _{All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits.}
2 _{A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device specification}
requirements. Complete DC parametric and functional testing shall be performed per applicable device specification at room
temperature followed by hot temperature, unless specified otherwise in the device specification.
4.4 VRC electrical specifications
Table 8. VRC electrical specifications
Spec
Characteristic
1 Current which can be sourced by V_RCCTL
Minimum Required Gain from external circuit:
I_DD / I_V_RCCTL (@V_DD = 1.32 V)¹
2
–40C
25C
150C
1 _{Assumes “typical usage” currents which will vary with application.}
Symbol
I_V_RCCTL
BETA
Min
6.25 µA
Max
20 mA
Units
—
50
50
50
500
4.5 DC electrical specifications
Table 9. DC electrical specifications
Spec
Characteristic
1 Maximum Operating Temperature Range — Die Junction Temperature
2 3.3 V Clock Synthesizer Voltage¹
3 3.3 V I/O Buffer Voltage¹
4 3.3–5.0 V Voltage Regulator Reference Voltage¹
V_RCSEL = V_SSA
V_RCSEL = V_DDA
5 3.3–5.0 V Analog Supply Voltage
Symbol
T_J
V_DDSYN
V_DD33
V_VRC
V_DDA
Min
–40.0
3.0
3.0
Max
150.0
3.6
3.6
3.0
3.6
4.5
5.5
maximum of
5.5
3.0 V or
V_VRC – 0.1
Unit
o_C
V
V
V
V
PXN20 Microcontroller Data Sheet, Rev. 1
30
Freescale Semiconductor