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| MC68HC912D60 Datasheet, PDF (372/432 Pages) Freescale Semiconductor, Inc – M68HC12 Microcontrollers | |||
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Freescale Semiconductor, Inc.
Electrical Specifications
Table 20-9. EEPROM Characteristics
VDD = 5.0 Vdc ±10%, VSS = 0 Vdc, TA = TL to TH, unless otherwise noted
Characteristic
Symbol Min Typical Max Unit
Minimum programming clock frequency(1)
fPROG
1.0
MHz
Programming time
tPROG
10
10.5 ms
Clock recovery time, following STOP, to continue programming tCRSTOP
tPROG+ 1 ms
Erase time
tERASE
10
10.5 ms
Write/erase endurance
30,000
10,000
(2)
cycles
Data retention
10
1. RC oscillator must be enabled if programming is desired and fSYS < fPROG.
2. If average TH is below 85° C.
years
Table 20-10. Flash EEPROM Characteristics (68HC912D60 only)
VDD = 5.0 Vdc ±10%, VSS = 0 Vdc, TA = TL to TH, unless otherwise noted
Characteristic
Symbol Min Typical Max
Program/erase supply voltage:
Read only
Program / erase / verify
Program/erase supply current
Word program(VFP = 12V)
Erase(VFP = 12V)
Number of programming pulses
Programming pulse
Program to verify time
Program margin
Number of erase pulses
Erase pulse
Erase to verify time
Erase margin
Program/erase endurance
Data retention
VFP VDDâ0.35 VDD VDD+0.5
11.4
12
12.6
IFP
30
4
nPP
50
tPPULSE
20
25
tVPROG
10
pm
100(1)
nEP
5
tEPULSE
5
10
tVERASE
1
em
100(1)
100
10
1. The number of margin pulses required is the same as the number of pulses used to program or erase.
Units
V
V
mA
mA
pulses
µs
µs
%
pulses
ms
ms
%
cycles
years
Use of an external circuit to condition VFP is recommended. Figure 20-1
shows a simple circuit that maintains required voltages and filters
transients. VFP is pulled to VDD via Schottky diode D2. Application of
Advance Information
372
Electrical Specifications
For More Information On This Product,
Go to: www.freescale.com
68HC(9)12D60 â Rev 4.0
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