MC68HC912D60 Datasheet, PDF (109/432 Pages) Freescale Semiconductor, Inc – M68HC12 Microcontrollers

Freescale Semiconductor, Inc.
Flash Memory
Programming the Flash EEPROM
6. Remove programming voltage by clearing ENPE.
7. Delay while high voltage is turning off (t_VPROG).
8. Read the address location to verify that it has been programmed
• If the location is not programmed, repeat steps 4 through 7 until
the location is programmed or until the specified maximum
number of program pulses has been reached (n_PP)
• If the location is programmed, repeat the same number of pulses
as required to program the location. This provides 100% program
margin.
9. Read the address location to verify that it remains programmed.
10. Clear LAT.
11. If there are more locations to program, repeat steps 2 through 10.
12. Turn off V_FP (reduce voltage on V_FP pin to V_DD).
The flowchart in Figure 7-1 demonstrates the recommended
programming sequence.
68HC(9)12D60 — Rev 4.0
MOTOROLA
Flash Memory
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