MC68HC912D60 Datasheet, PDF (100/432 Pages) Freescale Semiconductor, Inc – M68HC12 Microcontrollers

Flash Memory
Freescale Semiconductor, Inc.
7.3 Overview
The Flash EEPROM array is arranged in a 16-bit configuration and may
be read as either bytes, aligned words or misaligned words. Access time
is one bus cycle for byte and aligned word access and two bus cycles for
misaligned word operations.
The Flash EEPROM module requires an external program/erase voltage
(V_FP) to program or erase the Flash EEPROM array. The external
program/erase voltage is provided to the Flash EEPROM module via an
external V_FP pin. To prevent damage to the flash array, V_FP should
always be within the specification as defined in Table 20-10 in Electrical
Specifications. Programming is by byte or aligned word. The Flash
EEPROM module supports bulk erase only.
The Flash EEPROM module has hardware interlocks which protect
stored data from accidental corruption. An erase- and program-
protected 8-Kbyte block for boot routines is located at $6000–$7FFF or
$E000–$FFFF depending upon the mapped location of the Flash
EEPROM arrays.
7.4 Flash EEPROM Control Block
A 4-byte register block for each module controls the Flash EEPROM
module operation. Configuration information is specified and
programmed independently from the contents of the Flash EEPROM
array. At reset, the 4-byte register section starts at address $00F4/$00F8.
7.5 Flash EEPROM Arrays
After reset, the 32K Flash EEPROM array is located from addresses
$8000 to $FFFF and the 28K Flash EEPROM array is from $1000 to
$7FFF. In expanded modes, the Flash EEPROM arrays are turned off.
The Flash EEPROM can be mapped to an alternate address range. See
Operating Modes and Resource Mapping.
Advance Information
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Flash Memory
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68HC(9)12D60 — Rev 4.0
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