K20P81M100SF2_1109 Datasheet, PDF (33/75 Pages) Freescale Semiconductor, Inc – K20 Sub-Family Data Sheet

Peripheral operating requirements and behaviors
Table 21. Flash command timing specifications (continued)
Symbol Description
Min.
Typ.
Byte-write to FlexRAM execution time:
t_eewr8b32k
t_eewr8b64k
t_eewr8b128k
t_eewr8b256k
• 32 KB EEPROM backup
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
—
385
—
475
—
650
—
1000
Word-write to FlexRAM for EEPROM operation
t_eewr16bers Word-write to erased FlexRAM location
execution time
—
175
Word-write to FlexRAM execution time:
t_eewr16b32k
t_eewr16b64k
t_eewr16b128k
t_eewr16b256k
• 32 KB EEPROM backup
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
—
385
—
475
—
650
—
1000
Longword-write to FlexRAM for EEPROM operation
t_eewr32bers Longword-write to erased FlexRAM location
execution time
—
360
Longword-write to FlexRAM execution time:
t_eewr32b32k
t_eewr32b64k
t_eewr32b128k
t_eewr32b256k
• 32 KB EEPROM backup
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
—
630
—
810
—
1200
—
1900
Max.
1800
2000
2400
3200
260
1800
2000
2400
3200
540
2050
2250
2675
3500
Unit
Notes
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
1. Assumes 25MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
6.4.1.3 Flash (FTFL) current and power specfications
Table 22. Flash (FTFL) current and power specfications
Symbol
I_{DD_PGM}
Description
Worst case programming current in program flash
Typ.
Unit
10
mA
6.4.1.4 Reliability specifications
Table 23. NVM reliability specifications
Symbol Description
Min.
Program Flash
Typ.¹
Max.
t_nvmretp10k Data retention after up to 10 K cycles
5
50
—
Table continues on the next page...
K20 Sub-Family Data Sheet Data Sheet, Rev. 6, 9/2011.
Freescale Semiconductor, Inc.
Unit
years
Notes
2
33