K20P81M100SF2_1109 Datasheet, PDF (32/75 Pages) Freescale Semiconductor, Inc – K20 Sub-Family Data Sheet

Peripheral operating requirements and behaviors
6.4.1.2 Flash timing specifications — commands
Table 21. Flash command timing specifications
Symbol
t_rd1blk256k
Description
Read 1s Block execution time
• 256 KB program/data flash
Min.
—
Typ.
—
Max.
1.7
t_rd1sec2k Read 1s Section execution time (flash sector)
—
—
60
t_pgmchk Program Check execution time
—
—
45
t_rdrsrc Read Resource execution time
—
—
30
t_pgm4 Program Longword execution time
—
65
145
Erase Flash Block execution time
t_ersblk256k
• 256 KB program/data flash
—
435
3700
t_ersscr Erase Flash Sector execution time
—
Program Section execution time
t_pgmsec512
• 512 B flash
—
t_pgmsec1k
• 1 KB flash
—
t_pgmsec2k
• 2 KB flash
—
t_rd1all Read 1s All Blocks execution time
—
t_rdonce Read Once execution time
—
t_pgmonce Program Once execution time
—
t_ersall Erase All Blocks execution time
—
t_vfykey Verify Backdoor Access Key execution time
—
Swap Control execution time
t_swapx01
• control code 0x01
—
t_swapx02
• control code 0x02
—
t_swapx04
• control code 0x04
—
t_swapx08
• control code 0x08
—
Program Partition for EEPROM execution time
t_pgmpart256k
• 256 KB FlexNVM
—
14
114
2.4
—
4.7
—
9.3
—
—
1.8
—
25
65
—
870
7400
—
30
200
—
70
150
70
150
—
30
450
—
Set FlexRAM Function execution time:
t_setramff
t_setram32k
t_setram256k
• Control Code 0xFF
• 32 KB EEPROM backup
• 256 KB EEPROM backup
—
70
—
—
0.8
1.2
—
4.5
5.5
Byte-write to FlexRAM for EEPROM operation
t_eewr8bers Byte-write to erased FlexRAM location execution
—
time
175
260
Table continues on the next page...
Unit
ms
μs
μs
μs
μs
ms
ms
ms
ms
ms
ms
μs
μs
ms
μs
μs
μs
μs
μs
ms
μs
ms
ms
μs
Notes
1
1
1
2
2
1
2
1
3
K20 Sub-Family Data Sheet Data Sheet, Rev. 6, 9/2011.
32
Freescale Semiconductor, Inc.