K11P121M50SF4 Datasheet, PDF (31/59 Pages) Freescale Semiconductor, Inc – K11 Sub-Family Data Sheet

Peripheral operating requirements and behaviors
Table 20. Flash command timing specifications (continued)
Symbol Description
Byte-write to FlexRAM execution time:
t_eewr8b32k
t_eewr8b64k
t_eewr8b128k
• 32 KB EEPROM backup
• 64 KB EEPROM backup
• 128 KB EEPROM backup
Min.
—
—
Typ.
385
475
650
Max.
1800
2000
2400
Unit
Notes
μs
μs
μs
Word-write to FlexRAM for EEPROM operation
t_eewr16bers Word-write to erased FlexRAM location
execution time
—
175
260
μs
Word-write to FlexRAM execution time:
t_eewr16b32k
t_eewr16b64k
t_eewr16b128k
• 32 KB EEPROM backup
• 64 KB EEPROM backup
• 128 KB EEPROM backup
—
385
1800
μs
—
475
2000
μs
—
650
2400
μs
Longword-write to FlexRAM for EEPROM operation
t_eewr32bers Longword-write to erased FlexRAM location
execution time
—
360
540
μs
Longword-write to FlexRAM execution time:
t_eewr32b32k
t_eewr32b64k
t_eewr32b128k
• 32 KB EEPROM backup
• 64 KB EEPROM backup
• 128 KB EEPROM backup
—
630
2050
μs
—
810
2250
μs
—
1200
2675
μs
1. Assumes 25MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
6.4.1.3 Flash high voltage current behaviors
Table 21. Flash high voltage current behaviors
Symbol Description
Min.
Typ.
Max.
Unit
I_{DD_PGM} Average current adder during high voltage
—
flash programming operation
2.5
6.0
mA
I_{DD_ERS} Average current adder during high voltage
—
flash erase operation
1.5
4.0
mA
6.4.1.4 Reliability specifications
Table 22. NVM reliability specifications
Symbol Description
Min.
Typ.¹
Program Flash
t_nvmretp10k Data retention after up to 10 K cycles
t_nvmretp1k Data retention after up to 1 K cycles
5
50
20
100
Table continues on the next page...
Max.
—
—
K11 Sub-Family Data Sheet Data Sheet, Rev. 3, 08/2012.
Freescale Semiconductor, Inc.
Unit
years
years
Notes
31