33910 Datasheet, PDF (12/44 Pages) Freescale Semiconductor, Inc – LIN System Basis Chip with 2x60mA High Side Drivers

ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
Characteristics noted under conditions 5.5V ≤ V_SUP ≤ 18V, -40°C ≤ T_A ≤ 125°C for the 33910 and -40°C ≤ T_A ≤ 85°C for the
34910, unless otherwise noted. Typical values noted reflect the approximate parameter mean at T_A = 25°C under nominal
conditions, unless otherwise noted.
Characteristic
LIN PHYSICAL LAYER, TRANSCEIVER (LIN)⁽³⁶⁾
Symbol
Min
Typ
Max
Unit
Output Current Limitation
Dominant State, V_BUS = 18V
I_BUSLIM
mA
40
120
200
Leakage Output Current to GND
Dominant State; V_BUS = 0V; V_BAT = 12V
I_{BUS_PAS_DOM}
-1.0
–
–
mA
Recessive State; 8V < V_BAT < 18V; 8V < V_BUS < 18V; V_BUS ≥ V_BAT I_{BUS_PAS_REC}
–
–
20
µA
GND Disconnected; GND_DEVICE = V_SUP; V_BAT = 12V; 0 < V_BUS < 18V ^IBUS_NO_GND
-1.0
–
1.0
mA
V_BAT disconnected; V_{SUP_DEVICE} = GND; 0 < V_BUS < 18V
I_BUS
–
–
100
µA
Receiver Input Voltages
Receiver Dominant State
Receiver Recessive State
Receiver Threshold Center (V_{TH_DOM} + V_{TH_REC})/2
Receiver Threshold Hysteresis (V_{TH_REC} - V_{TH_DOM})
V_BUSDOM
–
V_SUP
–
0.4
V_BUSREC
0.6
–
–
V_{BUS_CNT}
0.475
0.5
0.525
V_HYS
–
–
0.175
LIN Transceiver Output Voltage
V
Recessive State, TXD HIGH, I_OUT = 1.0 µA
V_{LIN_REC}
V_SUP-1
–
–
Dominant State, TXD LOW, 500Ω External Pull-up Resistor, LDVS = ^VLIN_DOM_0
–
1.1
1.4
0
V_{LIN_DOM_1}
–
1.7
2
Dominant State, TXD LOW, 500Ω External Pull-up Resistor, LDVS =
1
LIN Pull-up Resistor to V_SUP
Over-temperature Shutdown⁽³⁷⁾
R_SLAVE
20
30
60
kΩ
T_LINSD
150
165
180
°C
Over-temperature Shutdown Hysteresis
T_{LINSD_HYS}
–
10
–
°C
Notes
36. Parameters guaranteed for 7.0V ≤ V_SUP ≤ 18V.
37. When Over-temperature shutdown occurs, the LIN bus goes in recessive state and the flag LINOT in LINSR is set.
33910
12
Analog Integrated Circuit Device Data
Freescale Semiconductor