M13S2561616A_1 Datasheet, PDF (8/49 Pages) Elite Semiconductor Memory Technology Inc. – 4M x 16 Bit x 4 Banks Double Data Rate SDRAM

ESMT
M13S2561616A
Operation Temperature Condition -40~85°C
AC Timing Parameter & Specifications-continued
Parameter
Symbol
-5
-6
min
max
min
max
ns
Half Clock Period
t_HP
t_CLmin or
t_CHmin
-
t_CLmin or
t_CHmin
-
ns
DQ-DQS output hold time
t_QH
t_HP-t_QHS
-
t_HP-t_QHS
-
ns
Data hold skew factor
t_QHS
-
0.5
-
0.55
ns
ACTIVE to PRECHARGE
command
t_RAS
40
70K
42
70K
ns
Row Cycle Time
t_RC
55
-
60
-
ns
AUTO REFRESH Row Cycle
Time
t_RFC
70
-
72
-
ns
ACTIVE to READ,WRITE
delay
t_RCD
15
-
18
-
ns
PRECHARGE command
period
t_RP
15
-
18
-
ns
ACTIVE to READ with
AUTOPRECHARGE
command
t_RAP
18
120K
18
120K
ns
ACTIVE bank A to ACTIVE
bank B command
t_RRD
10
-
12
-
ns
Write recovery time
t_WR
15
-
15
-
ns
Write data in to READ
command delay
t_WTR
2
-
1
-
t_CK
Col. Address to Col. Address
delay
t_CCD
1
-
1
-
t_CK
Average periodic refresh
interval
t_REFI
-
7.8
-
7.8
us
Write preamble
t_WPRE
0.25
-
0.25
-
t_CK
Write postamble
t_WPST
0.4
0.6
0.4
0.6
t_CK
DQS read preamble
t_RPRE
0.9
1.1
0.9
1.1
t_CK
DQS read postamble
t_RPST
0.4
0.6
0.4
0.6
t_CK
Clock to DQS write preamble
setup time
t_WPRES
0
-
0
-
ns
Load Mode Register /
Extended Mode register
t_MRD
2
-
1
-
t_CK
cycle time
Exit self refresh to READ
command
t_XSRD
200
-
200
-
t_CK
Exit self refresh to
non-READ command
t_XSNR
75
-
75
-
ns
Autoprecharge write
recovery+Precharge time
t_DAL
30
-
-
30
ns
Elite Semiconductor Memory Technology Inc.
Publication Date : Dec. 2007
Revision : 1.1
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