M13S2561616A_1 Datasheet, PDF (43/49 Pages) Elite Semiconductor Memory Technology Inc. – 4M x 16 Bit x 4 Banks Double Data Rate SDRAM

ESMT
Write Interrupted by a Read (@BL=8, CL=3)
0
1
CLK
CLK
CKE
2
3
4
5
HIGH
CS
RAS
CAS
BA0,BA1
BAa
BAb
A10/AP
ADDR
Ca
(A0~An)
Cb
WE
DQS
DQ
DM
COMMAND
Da0
Da1
Da2
Da3 Da4 Da5
Maskecd by DM
WRITE
tWTR
READ
M13S2561616A
Operation Temperature Condition -40~85°C
6
7
8
9
10
Qb0 Qb1 Qb2 Qb3 Qb4 Qb5
Elite Semiconductor Memory Technology Inc.
Publication Date : Dec. 2007
Revision : 1.1
43/49