M13S2561616A_1 Datasheet, PDF (2/49 Pages) Elite Semiconductor Memory Technology Inc. – 4M x 16 Bit x 4 Banks Double Data Rate SDRAM

ESMT
DDR SDRAM
Features
M13S2561616A
Operation Temperature Condition -40~85°C
4M x 16 Bit x 4 Banks
Double Data Rate SDRAM
z JEDEC Standard
z Internal pipelined double-data-rate architecture, two data access per clock cycle
z Bi-directional data strobe (DQS)
z On-chip DLL
z Differential clock inputs (CLK and CLK )
z DLL aligns DQ and DQS transition with CLK transition
z Quad bank operation
z CAS Latency : 2; 2.5; 3
z Burst Type : Sequential and Interleave
z Burst Length : 2, 4, 8
z All inputs except data & DM are sampled at the rising edge of the system clock(CLK)
z Data I/O transitions on both edges of data strobe (DQS)
z DQS is edge-aligned with data for reads; center-aligned with data for WRITE
z Data mask (DM) for write masking only
z V_DD = 2.3V ~ 2.7V, V_DDQ = 2.3V ~ 2.7V
z Auto & Self refresh
z 7.8us refresh interval
z SSTL-2 I/O interface
z 66pin TSOPII and 60 ball BGA package
Ordering information :
PRODUCT NO.
M13S2561616A -5TIG
M13S2561616A -6TIG
M13S2561616A -5BIG
M13S2561616A -6BIG
MAX FREQ
200MHz
166MHz
200MHz
166MHz
VDD
2.5V
2.5V
PACKAGE COMMENTS
TSOPII
BGA
Pb-free
Elite Semiconductor Memory Technology Inc.
Publication Date : Dec. 2007
Revision : 1.1
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