M13S2561616A_1 Datasheet, PDF (10/49 Pages) Elite Semiconductor Memory Technology Inc. – 4M x 16 Bit x 4 Banks Double Data Rate SDRAM

ESMT
Basic Functionality
M13S2561616A
Operation Temperature Condition -40~85°C
Power-Up and Initialization Sequence
The following sequence is required for POWER UP and Initialization.
1. Apply power and attempt to maintain CKE at a low state (all other inputs may be undefined.)
- Apply VDD before or at the same time as VDDQ.
- Apply VDDQ before or at the same time as V_TT & V_REF).
2. Start clock and maintain stable condition for a minimun of 200us.
3. The minimun of 200us after stable power and clock (CLK, CLK ), apply NOP & take CKE high.
4. Issue precharge commands for all banks of the device.
*1 5. Issue EMRS to enable DLL. (To issue “DLL Enable” command, provide “Low” to A0, “High” to BA0 and “Low” to all of the
rest address pins, A1~A12 and BA1)
*1 6. Issue a mode register set command for “DLL reset”. The additional 200 cycles of clock input is required to lock the DLL.
(To issue DLL reset command, provide “High” to A8 and “Low” to BA0)
*2 7. Issue precharge commands for all banks of the device.
8. Issue 2 or more auto-refresh commands.
9. Issue a mode register set command with low to A8 to initialize device operation.
*1 Every “DLL enable” command resets DLL. Therefore sequence 6 can be skipped during power up. Instead of it, the additional
200 cycles of clock input is required to lock the DLL after enabling DLL.
*2 Sequence of 6 & 7 is regardless of the order.
Pow er up & Initiali zation Seque nce
0
CL K
CL K
Co m ma nd
p r e ch a r g e
A l l B anks
1
2
3
4
5
6
7
8
tRP
tM RD tMRD
EMRS
MR S
p rechar ge
D l l R e s e t A ll Ba n k s
tRP
1st A uto
R efres h
9
10
11
12 13 14
15
16
17
18
19
tRFC
2 n d Au to
R ef resh
tRFC
tM RD
Mo d e
A ny
Reg ist er Se t C o m m a n d
mi n . 20 0 C yc le
Elite Semiconductor Memory Technology Inc.
Publication Date : Dec. 2007
Revision : 1.1
10/49