M13S2561616A_1 Datasheet, PDF (37/49 Pages) Elite Semiconductor Memory Technology Inc. – 4M x 16 Bit x 4 Banks Double Data Rate SDRAM

ESMT
Write with Auto Precharge (@BL=8)
M13S2561616A
Operation Temperature Condition -40~85°C
Note 1.
The row active command of the precharge bank can be issued after t_RP from this point.
The new read/write command of another activated bank can be issued from this point.
At burst read/write with auto precharge, CAS interrupt of the same/another bank is illegal.
Elite Semiconductor Memory Technology Inc.
Publication Date : Dec. 2007
Revision : 1.1
37/49