M13S2561616A_1 Datasheet, PDF (44/49 Pages) Elite Semiconductor Memory Technology Inc. – 4M x 16 Bit x 4 Banks Double Data Rate SDRAM

ESMT
DM Function (@BL=8) only for write
0
1
CLK
CLK
2
3
CKE
CS
RAS
CAS
BA0,BA1
BAa
A10/AP
ADDR
Ca
(A0~An)
WE
4
5
HIGH
M13S2561616A
Operation Temperature Condition -40~85°C
6
7
8
9
10
DQS(CL=3)
DQ(CL=3)
DM
COMMAND
Qa0 Qa1 Qa2 Qa3 Qa4 Qa5 Qa6 Qa7
WRITE
Elite Semiconductor Memory Technology Inc.
Publication Date : Dec. 2007
Revision : 1.1
44/49