M13S5121632A Datasheet, PDF (40/47 Pages) Elite Semiconductor Memory Technology Inc. – 8M x 16 Bit x 4 Banks Double Data Rate SDRAM

ESMT
Write Interrupted by Precharge & DM (@BL=8)
M13S5121632A
0
1
CLK
CLK
CKE
CS
RAS
CAS
BA0,BA1
BAa
A10/AP
ADDR
Ca
(A0~An)
WE
2
3
4
0
1
2
3
4
5
HIGH
BAa
BAb
BAc
Cb
Cc
DQS
DQ
DM
COMMAND
Da0 Da1 Da2 Da3 Da4 Da5 Da6 Da7
Db0 Db1 Dc0 Dc1 Dc2 Dc3
WRITE
tWR
PRE
CHAR GE
WRITE
WRITE
Elite Semiconductor Memory Technology Inc.
Publication Date : Oct. 2008
Revision : 1.0
40/47