M13S5121632A Datasheet, PDF (39/47 Pages) Elite Semiconductor Memory Technology Inc. – 8M x 16 Bit x 4 Banks Double Data Rate SDRAM

ESMT
Write followed by Precharge (@BL=4)
0
1
CLK
CLK
CKE
2
3
4
5
6
HIGH
CS
RAS
CAS
BA0,BA1
BAa
BAa
A10/AP
ADDR
Ca
(A0~An)
WE
DQS
tWR
DQ
DM
COMMAND
Da0 Da1 Da2 Da3
WRITE
PRE
CHAR GE
M13S5121632A
7
8
9
10
Elite Semiconductor Memory Technology Inc.
Publication Date : Oct. 2008
Revision : 1.0
39/47