M13S5121632A Datasheet, PDF (35/47 Pages) Elite Semiconductor Memory Technology Inc. – 8M x 16 Bit x 4 Banks Double Data Rate SDRAM

ESMT
Write with Auto Precharge (@BL=8)
M13S5121632A
Note 1.
The row active command of the precharge bank can be issued after t_RP from this point.
The new read/write command of another activated bank can be issued from this point.
At burst read/write with auto precharge, CAS interrupt of the same/another bank is illegal.
Elite Semiconductor Memory Technology Inc.
Publication Date : Oct. 2008
Revision : 1.0
35/47