M12L16161A Datasheet, PDF (3/27 Pages) Elite Semiconductor Memory Technology Inc. – 512K x 16Bit x 2Banks Synchronous DRAM

M12L16161A
VDDQ/VSSQ
N.C/RFU
Data Output Power/Ground
No Connection/
Reserved for Future Use
Isolated power supply and ground for the output buffers to provide improved
noise immunity.
This pin is recommended to be left No Connection on the device.
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on any pin relative to VSS
VIN,VOUT
-1.0 ~ 4.6
V
Voltage on VDD supply relative to VSS
VDD,VDDQ
-1.0 ~ 4.6
V
Storage temperature
TSTG
-55 ~ + 150
°C
Power dissipation
PD
1
W
Short circuit current
IOS
50
MA
Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA=0 to 70 °C )
Parameter
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Output leakage current
Symbol
Min
VDD,VDDQ
3.0
VIH
2.0
VIL
-0.3
VOH
2.4
VOL
-
IIL
-5
IOL
-5
Typ
Max
3.3
3.6
3.0
VDD+0.3
0
0.8
-
-
-
0.4
-
5
-
5
Note :
1.VIH (max) = 4.6V AC for pulse width ≤ 10ns acceptable.
2.VIL (min) = -1.5V AC for pulse width ≤ 10ns acceptable.
3.Any input 0V ≤ VIN ≤ VDD+ 0.3V, all other pins are not under test = 0V.
4.Dout is disabled, 0V ≤ VOUT ≤ VDD.
Unit
Note
V
V
1
V
2
V
IOH =-2mA
V
IOL = 2mA
uA
3
uA
4
CAPACITANCE (VDD = 3.3V, TA = 25 °C , f = 1MHz)
Pin
Symbol
Min
Max
Unit
CLOCK
CCLK
2.5
4.0
pF
RAS , CAS , WE , CS , CKE, LDQM,
UDQM
CIN
2.5
5.0
pF
ADDRESS
CADD
2.5
5.0
pF
DQ0 ~DQ15
COUT
4.0
6.5
pF
Elite Semiconductor Memory Technology Inc.
P.3
Publication Date : Jan. 2000
Revision : 1.3u