IBIS4-14000-M Datasheet, PDF (4/30 Pages) Cypress Semiconductor – 14-Megapixel CMOS Image Sensor

IBIS4-14000-M
IBIS4-14000-C
1.0 Specifications
1.1 General Specifications
Table 2. IBIS4-14000 General Specifications
Parameter
Pixel architecture
Technology
Pixel size
Resolution
Power supply
Shutter type
Pixel rate
Frame rate
Value
3T pixel
CMOS
8 x 8 µm²
3048 x 4560
3.3V
Electronic rolling shutter
15 MHz nominal
3.25 frames/s
Power dissipation
176 mW
53 mA
Remarks
13.9 megapixels
20 MHz with extra power dissipation.
Full resolution with 4 parallel analog outputs
@ 15 MHz/channel
1.2 Electro-optical Specifications
1.2.1 Overview
All parameters are measured using the default settings (see
recommended operating conditions) unless otherwise
specified.
Table 3. IBIS4-14000 Electro-optical Specifications
Parameter
Effective conversion gain
Spectral response * fill factor
Peak Q.E. * fill factor
Full Well charge
Linear range
Temporal noise
(kTC noise limited)
Dynamic range
Linear dynamic range
Average dark current
Dark current signal
MTF at Nyquist
Fixed pattern noise (local)
Fixed pattern noise (global)
PRNU
Anti-blooming
Value
18.5 V/e-
25 V/e-
0.22 A/W (peak)
45%
65000 electrons
90% of full well charge
35 electrons
1857:1 (65.4 dB)
1671:1 (64.5 dB)
55 pA/cm²
223 electrons/s
4.13 mV/s
0.55 in X
0.57 in Y
0.11% Vsat RMS
0.15% Vsat RMS
<1% RMS of signal
10⁵
Remarks
Full range. See note 1.
Linear range. See note 1.
Between 500 and 700 nm.
See note 1.
Linearity definition: < 3% deviation from straight line through zero
point.
kTC noise, being the dominant noise source in the dark at short
integration times.
See note 1.
See note 1. 3% deviation.
Average value @ 24°C lab temperature.
Average value @ 24°C lab temperature.
Measured at 600 nm.
Average value of RMS variation on local 32 x 32 pixel windows.
Charge spill-over to neighboring pixels (= CCD blooming
mechanism)
Note:
1. Settings: VDD = 3.3V, VDDR = 4V and VDD_ARRAY = 3V.
Document #: 38-05709 Rev. *A
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