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PSOC4200M Datasheet, PDF (27/42 Pages) Cypress Semiconductor – Programmable System-on-Chip
PSoC® 4: PSoC 4200M Family
Datasheet
Table 24. Fixed SPI Master mode AC Specifications
(Guaranteed by Characterization)
Spec ID
Parameter
Description
Min Typ Max Units Details/Conditions
SID167
TDMO
MOSI valid after Sclock driving
–
–
15
ns
edge
SID168
TDSI
MISO valid before Sclock
20
–
capturing edge. Full clock, late
MISO Sampling used
–
ns
SID169
THMO
Previous MOSI data hold time
0
–
with respect to capturing edge at
Slave
–
ns
Table 25. Fixed SPI Slave mode AC Specifications
(Guaranteed by Characterization)
Spec ID
SID170
SID171
SID171A
SID172
SID172A
Parameter
TDMI
TDSO
TDSO_ext
THSO
TSSELSCK
Description
MOSI valid before Sclock
capturing edge
MISO valid after Sclock driving
edge
MISO valid after Sclock driving
edge in Ext. Clock mode
Previous MISO data hold time
SSEL Valid to first SCK Valid
edge
Min Typ
40
–
Max
–
Units
ns
Details/Conditions
–
– 42 + 3 × ns
(1/FCPU)
–
–
48
ns
0
–
–
ns
100 –
–
ns
Memory
Table 26. Flash DC Specifications
Spec ID
SID173
Parameter
VPE
Description
Erase and program voltage
Min Typ
1.71
–
Table 27. Flash AC Specifications
Spec ID
Parameter
Description
Min Typ
SID174
TROWWRITE
Row (block) write time (erase and –
–
program)
SID175
TROWERASE
Row erase time
–
–
SID176
TROWPROGRAM Row program time after erase
–
–
SID178
TBULKERASE
Bulk erase time (128 KB)
–
–
SID179
TSECTORERASE Sector erase time (8 KB)
–
–
SID180
TDEVPROG
Total device program time
–
–
SID181
FEND
Flash endurance
100 K –
SID182
SID182A
FRET
SID182B FRETQ
Flash retention. TA  55 °C, 100 K 20
–
P/E cycles
Flash retention. TA  85 °C, 10 K 10
–
P/E cycles
Flash retention. TA  105 °C, 10K 10
20
P/E cycles,  three years at TA ≥
85 °C
Max Units Details/Conditions
5.5
V
Max Units Details/Conditions
20
ms Row (block) = 128 bytes
13
ms
7
ms
35
ms
15
ms
15 seconds Guaranteed by charac-
terization
–
cycles Guaranteed by charac-
terization
–
years Guaranteed by charac-
terization
–
years Guaranteed by charac-
terization
–
years Guaranteed by charac-
terization.
Document Number: 001-93963 Rev. *G
Page 27 of 42